DSA00589941.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQA0011DNS Silicon N-Channel MOS FET Features High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% (f = 520 MHz) Small outline
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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Ga FET marking k RQA0011 RQA0011DNS