DSA00589874.pdf
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Renesas Electronics
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Preliminary Data Sheet
NX6342EP
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured
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Original
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