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    DSA00589874.pdf

    • Renesas Electronics
    • Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured
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