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DSAZIHA1000288741.pdf
by Infineon Technologies
Partial File Text
IPP086N10N3 G IPB083N10N3 G OptiMOSâ¢3 Power-Transistor IPI086N10N3 G IPD082N10N3 G Product Summary Features V DS 8.2 m⦠ID ⢠Excellent gate charge x R DS(on) product
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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082N10N
083N10N
086n10
086N10N
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