DSAH00680999.pdf by Toshiba

Partial File Text TC58NYG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Elect
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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