DSA00589070.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet 2SJ574 Silicon P Channel MOS FET High Speed Switching Features Low on-resistance RDS = 1.1 typ. (VGS = 10 V, ID = 150 mA) RDS = 2.2 typ. (VGS = 4 V, ID = 150 mA) 4
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