DSA00589019.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RQA0004LXAQS Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact packa
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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