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    DSA00587622.pdf by Renesas Electronics

    • Data Sheet NE3509M14 N-Channel GaAs HJ-FET, L to C Band Low Noise FEATURES ยท Super low noise figure and high associated gain high isolation NF = 0.4 dB TYP., Ga = 18.5 dB TYP. @ VDS = 2 V, ID =
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