DSA00585850.pdf by California Eastern Laboratories

Partial File Text NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · HIGH INSERTION GAIN: 18.5 dB at 500 MHz · LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES · HIGH POWER GAIN: 12 dB at 2 GHz B · L
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8F157 Amplifier Micro-X "marking code" D NE021-33 ne02133 MARKING ne02133t1b