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    DSAZIHA100057983.pdf

    • American Microsemiconductor
    • TP0610E Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)110m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s
    • Original

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