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DSAH00676573.pdf
Manufacturer
Toshiba
Partial File Text
1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5A
Datasheet Type
Original
ECAD Model
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