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    DSAH00676555.pdf

    • Toshiba
    • 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications · Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char
    • Original
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    DSAH00676555.pdf preview Download Datasheet

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    General Semiconductor diode marking s6 GENERAL SEMICONDUCTOR MARKING s6 s6 general semiconductor

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