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    DSA00341956.pdf by ON Semiconductor

    • MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construct
    • Original
    • No
    • Unknown
    • Obsolete
    • Find it at Findchips.com

    DSA00341956.pdf preview

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    B3100 DIODE mbr3100 MBR3100 MBR3100RL
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