DSA0084195.pdf by Fairchild Semiconductor

Partial File Text FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 m: Features General Description Max rDS(on) = 19 m: at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Sem
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FDMC8884 MO-229