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    DSAZIHA100057318.pdf by American Microsemiconductor

    • HCT810 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)25 V(BR)GSS (V) I(D) Max. (A)10m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (C
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