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    DSAZIHA100056441.pdf

    • American Microsemiconductor
    • 286-1BFY Transistors N-Channel Depletion MOSFET V(BR)DSS (V)30 V(BR)GSS (V)10 I(D) Max. (A)20m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)200m Mi
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