DSAE0062642.pdf by International Rectifier

Partial File Text PD - 9.1362 IRFI520N PRELIMINARY HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2F 1 marking irf 630 datasheet IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRF Power MOSFET code marking IRF520N IRFI520N IRFI840G TO-220 N-Channel HEXFET Power MOSFET

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