DSASW00350153.pdf by Panasonic

Partial File Text 2PG351 IGBTs 2PG351 Insulated Gate Bipolar Transistor Unit : mm s Features 3.5±0.2 7.0±0.3 q High breakdown voltage : VCES= 400V q Large current control possible : IC(peak
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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