DSAH00672611.pdf by Toshiba

Partial File Text SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-SPEED Switching Applications · · 4 V drive Low on-resistance : Ron = 43m (max.) (@VGS = 4V) : Ron = 32m (max.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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kdr 5000 SSM3K311T