DSASW00347281.pdf

Partial File Text EGNB045MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 47.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 13dB(typ.) @ f=2.2GHz P
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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