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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
·
OUTLINE DIMENSIONS
LOW NOISE:
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
2.1 ± 0.1
1.25 ± 0.1
HI
