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    • TOSHIBA {DISCRETE/OPTO} ~5b DE 1^0^7250 ODDTSSi A | 9097250 TOSHIBA < DI SCRETE/OPTO) ' J7559 0 jn -33,07 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2562 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES
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    2SA1012 2SC2562 2SC2562 Toshiba
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