DSAISS00093579.pdf by Toshiba

Partial File Text GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 Unit: mm STROBE FLASH APPLICATIONS l 3rd Generation l EnhancementâMode l Low Saturation Voltage: VCE (sat)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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