DSAISS00083667.pdf by Toshiba

Partial File Text GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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