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    DSAISS00083655.pdf

    • Toshiba
    • GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm · Enhancement-Mode · High Speed: tf = 0.40 µs (max)
    • Original

    DSAISS00083655.pdf preview Download Datasheet

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