DSA00336619.pdf by Hitachi Semiconductor

Partial File Text 3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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