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    DSA00449446.pdf

    • Infineon Technologies
    • Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 ­ 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the
    • Original

    DSA00449446.pdf preview Download Datasheet

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