DSA0065172.pdf by Cree

Partial File Text PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficie
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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ATC600F ATC600S CGH2512 CGH25120 CGH25120F CGH25120F-TB CGH25120FCGH25120F Model CGH25120F RO4350

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