DSA0064766.pdf by Cree

Partial File Text CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain an
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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470PF cgh35 CGH3506 CGH35060 CGH35060-TB CGH35060F CGH35060F-TB s-parameter Tantalum