DSA0064766.pdf by Cree

Partial File Text CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain an
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSA0064766.pdf preview

Download Datasheet

User Tagged Keywords

470PF cgh35 CGH3506 CGH35060 CGH35060-TB CGH35060F CGH35060F-TB s-parameter Tantalum