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    DSAZSAA0008130.pdf by Fairchild Semiconductor

    • IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS(on) = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance I
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