DSA00203645.pdf by IXYS

Partial File Text High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Condi
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10N170 BiMOSFET