DSA00896685.pdf by Unisonic Technologies

Partial File Text UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce(sat)=-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µ
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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