DSA0064455.pdf
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Toshiba
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GT25G102(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GT25G102(SM)
Unit: mm
STROBE FLASH APPLICATIONS
High Input Impedance
Low Saturation Voltage:VCE (sat) = 8V (Max.
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Original
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