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    DSA0064455.pdf

    • Toshiba
    • GT25G102(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.
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    DSA0064455.pdf preview Download Datasheet

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