DSA0064439.pdf by Toshiba

Partial File Text GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE(sat) = 8.0V (Max.)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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