DSA0064438.pdf
-
Toshiba
-
GT20G102(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GT20G102(SM)
Unit: mm
STROBE FLASH APPLICATIONS
High Input Impedance
Low Saturation Voltage
: VCE (sat) = 8V
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com