DSAEDA00068350.pdf by Sumitomo Electric

Partial File Text EGN26C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm (typ.) @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GH
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