DSA00200796.pdf by California Eastern Laboratories

Partial File Text NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) NX7361JB-BC FEATURES DESCRIPTION · HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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NX7361JB-BC NX7361JB-BC-AZ