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    DSAE0053370.pdf

    • Multicomp
    • TBC635 Medium Power Bipolar Transistors Features: · High performance, low frequency devices typically with current ratings 1A Up to 1W power dissipation. · NPN silicon planar epitaxial transistor
    • Original
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    DSAE0053370.pdf preview Download Datasheet

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    "Bipolar Transistors" IC 358 TBC63 TBC635

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