This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
POWRFETâ¢
SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR
GEOMETRY 446, PG. 58
⢠FOR HIGH DYNAMIC RANGE R.F. AMPLIFIERS
⢠SPECIFIED FOR H.F. BAND - USEABLE THRU 500 MHz
⢠L
