DSA00443269.pdf by Fairchild Semiconductor

Partial File Text IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF61 IRF610 power MOSFET IRF610 TB334

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