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DSAIH000133591.pdf
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TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5111F 2SC5111F FOR VCO APPLICATION 1.6 ± 0.1 0.85 ±0.1 Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTI
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RoHS
No
Pb Free
No
Lifecycle
Active
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