DSAIH000133173.pdf

Manufacturer Not Available
Partial File Text TOSHIBA M ICROW AVE SEM ICO NDUCTO R MICROWAVE POWER GaAs FET TECHNICAL DATA FEATURES : HIGH POWER IM 3 = - 45 dBc at Po = 30 dBm, Single Carrier Level HIGH POWER P1dB = 42.0 dBm at 10.7 GH
Datasheet Type Scan
ECAD Model

DSAIH000133173.pdf preview Download Datasheet