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    DSAIH000133147.pdf

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    • TOSHIBA MICROWAVE SEMICONDUCTOR MICROW AVE POWER GaAs FET TECHNICAL DATA FEATURES: HIGH POWER PidB = 39.5 dBm at 11.7 GHz to 12.7 GHz HIGH GAIN GidB = 5.0 dB at 11.7 GHz to 12.7 GHz TIM1
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