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TOSHIBA
MICROWAVE SEMICONDUCTOR
MICROWAVE POWER G aAs FET
TECHNICAL DATA
FEATURES :
H IG H PO W ER PidB = 39-5 dB m at 2.6 G H z H IG H G AIN G-|cib = 8-5 dB at 2.6 G H z
TNM2600-7
H