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TOSHIBA
MICROWAVE SEMICONDUCTOR
MICROWAVE POWER GaAs FET
TECHNICAL DATA
FEATURES:
> H IG H POW ER P-jdB = 3 3 .5 dBm at f = 14.5 GHz H IG H GAIN G id B = 6 .5 d B a t f = 14.5 GHz
JS8856-
