DSAIH000128579.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR M ICRO W AVE PO W ER GaAs FET TECHNICAL DATA FEATURES: H IG H POWER PldB= 2 4 d B m H IG H GAIN G1 d B = 8 dB at f = 15 GHz at f = 15 GHz JS8851-AS
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSAIH000128579.pdf preview Download Datasheet