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TOSHIBA
MICROWAVE SEMICONDUCTOR
MICROWAVE POWER GaAs FET
TECHNICAL DATA
FEATURES:
H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz
JS8850A-AS
SUI
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