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DSAIH000128575.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER GaAs FET JS8836A-AS TECHNICAL DATA FEATURES: ยท HIGH POWER PjdB = 29.5 dBm at f = 8 GHz HIGH GAIN G1dB = 7 5 dB at f = 8 GHz SUITABLE FOR C-
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JS8836A-AS